Power device out of stock fear of the second half of 2011

At present, the delivery date of Silan Microelectronics is basically controlled within one month, and the pressure on chip production and packaging and testing capacity is unprecedented. Silan Micro enhances production management capabilities, utilizes the capacity of existing equipment to the extreme, and continuously reduces the processing cycle for each process. On the other hand, it strengthens communication with customers and arranges materials according to customer needs. In addition, Silan Micro plans to invest RMB 135 million in the next two to three years from 2010 to form a multi-chip high-voltage power module manufacturing line. According to Tang Xuemin, the monthly production capacity of Silan micro power devices has been increased from 40,000 (6 inches) at the beginning of 2010 to 60,000 at the end of 2010. This number will be rewritten to more than 80,000 in 2011.

The dual-driven traditional power device market in the emerging and traditional markets continues to recover. Coupled with the continued emergence of emerging markets, power devices still remain in demand. In 2011, power device suppliers generally adopted a two-pronged approach. Both traditional and emerging markets focused on variable frequency motors, motors, and new energy. It can be predicted that the power device market will continue to be filled with smoke in 2011.

Hu Fengping pointed out that Infineon’s market focus is on energy-efficient fields such as new energy markets such as wind power, solar energy, and electric vehicles, motor drives, variable frequency home appliances, and inverter welders. Mitsubishi Electric is also optimistic about new energy fields such as wind power generation, solar power generation, and electric vehicles, as well as the traditional motor drive, power supply, and air conditioning markets.

In the case of international companies that are involved in the emerging markets, local companies choose to start with small and medium-sized power devices. Silan Microelectronics' target market is locked into AC-DC power supplies, low-power variable-frequency motors, HID lamps, energy-saving lamps, LED lamp drive systems, and solar photovoltaic systems. Analog devices emphasize the matching of process and design, but also need to be carefully crafted according to different customer applications.

Tang Xuemin believes that in addition to the most basic parameters such as turn-on voltage drop, current capacity, and reverse voltage, various application systems have different requirements for power devices, which are mainly reflected in some dynamic parameters. Therefore, dynamic parameters are optimized. Lan power device chip technology research and development of one of the key points. "Targeting specific application environments, or adjusting the parameters of the devices, or optimizing the peripheral circuits with customers is also an important technical task for us," he said.

SiC device centralized landing market In 2011, the power device market in addition to the traditional MOSFET and IGBT picks the main character, some new faces will also be upgraded from the role of the dragon jacket. Silicon carbide SiC appeared in the semiconductor market as early as 10 years ago. With the maturation of technology and the popularization of prices, many SiC power devices will be assembled in the power market in 2011.

Mitsubishi Electric has successfully used SiC to make new devices. By using SiC-made MOSFETs and Schottky diodes, it has developed an original 11kW inverter with 400V, which reduces energy consumption by up to 70% compared to silicon-made inverters. The power is 10 W/cm3. As a result, SiC devices have lower losses and can operate at higher temperatures, making devices smaller and using less power. As for the time to market for SiC devices, Mitsubishi Electric did not disclose it.

Another Japanese company also secretly made SiC devices. After Romm acquired SiCrystal, which manufactures SiC materials, in 2008, it has mastered the one-stop system for wafer fabrication, pre-processes, post-processes and power modules. In April 2010, RoHM has started mass production of SiC-made Schottky barrier diodes (SBD). In December of the same year, the company started mass production of SiC DMOSFET custom products and is expected to supply general-purpose products in the summer of 2011.

The six member companies of the German research project “NEULAND” announced that by using new semiconductor materials, energy losses from renewable energy, communications and lighting systems can be halved. As a member of NEULAND, Infineon clearly stated that it will launch SiC J-FET in 2011.